收藏本站
PD-91866B
IRF7663
HEXFET ? Power MOSFET
q
q
Trench Technology
Ultra Low On-Resistance
S
1
8
A
D
q
q
q
q
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
S
S
G
2
3
4
7
6
5
D
D
D
V DSS = -20V
R DS(on) = 0.020 ?
T op V ie w
Description
New trench HEXFET ? power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 ? package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
MICRO8 ?
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
E AS
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy ?
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
-8.2
-6.6
-66
1.8
1.15
10
115
± 12
-55 to + 150
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
70
°C/W
1
5 /25/00
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF7700GTRPBF MOSFET P-CH 20V 8.6A 8-TSSOP
IRF7700TRPBF MOSFET P-CH 20V 8.6A 8-TSSOP
IRF7701GTRPBF MOSFET P-CH 12V 10A 8-TSSOP
IRF7701TRPBF MOSFET P-CH 12V 10A 8-TSSOP
IRF7702GTRPBF MOSFET P-CH 12V 8A 8-TSSOP
IRF7703GTRPBF MOSFET P-CH 40V 6A 8-TSSOP
IRF7703TRPBF MOSFET P-CH 40V 6A 8-TSSOP
IRF7704GTRPBF MOSFET P-CH 40V 4.6A 8-TSSOP
相关代理商/技术参数
IRF7663TRHR 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 8.2A 8PIN MICRO8 - Tape and Reel
IRF7663TRPBF 功能描述:MOSFET MOSFT PCh -20V -8.2A 20mOhm 30nC Micro 8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7665S2TR1PBF 功能描述:MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7665S2TR1PBF 制造商:International Rectifier 功能描述:Transistor
IRF7665S2TRPBF 功能描述:MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7700 功能描述:MOSFET P-CH 20V 8.6A 8-TSSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7700GPBF 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET? Power MOSFET Ultra Low On-Resistance
IRF7700GTRPBF 功能描述:MOSFET MOSFT PCh -20V A mOhm 59nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube